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Volume 49, Issue 9
1 September 1986
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Research Article| September 01 1986
M. Chen;
M. Chen
IBM Almaden Research Center (K67/802), 650 Harry Road, San Jose, California 95120‐6099
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K. A. Rubin;
K. A. Rubin
IBM Almaden Research Center (K67/802), 650 Harry Road, San Jose, California 95120‐6099
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R. W. Barton
R. W. Barton
IBM Almaden Research Center (K67/802), 650 Harry Road, San Jose, California 95120‐6099
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Appl. Phys. Lett. 49, 502–504 (1986)
Article history
Received:
June 11 1986
Accepted:
July 08 1986
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Citation
M. Chen, K. A. Rubin, R. W. Barton; Compound materials for reversible, phase‐change optical data storage. Appl. Phys. Lett. 1 September 1986; 49 (9): 502–504. https://doi.org/10.1063/1.97617
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Results of rapid (laser induced) and slow (heating stage induced) crystallization studies on Te1−xGex, 0≤x≤0.6, are reported. The time it takes to laser crystallize varies with x by more than four orders of magnitude. Films with stoichiometric compositions, Te and GeTe, can be crystallized using laser pulses of less than 100 ns duration. Unlike Te, which spontaneously crystallizes at room temperature, GeTe has a crystallization temperature of >150 °C. From these results we argue that, in general, compound materials allow realization of fast‐switching, reversible, phase‐change optical recording media. Furthermore, this fast‐switching capability, from the amorphous to the crystalline state and back, can be attained simultaneously with long term data (amorphous phase) stability, provided the melting temperature of the compound is sufficiently high.
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© 1986 American Institute of Physics.
1986
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